5G: Daftar Pembuat RF Power Amplifier
Ada beberapa pabrikan pembuat RF Power Amplifier untuk BTS di dunia. Beberapa Modul Power Amplifier yang ada di antaranya di perlihatkan di bawah ini,
Quantic PMI (Planar Monolithics)
PA-2G18G-43-5-40-SFF dari Quantic PMI adalah Power Amplifier yang beroperasi dari 2 hingga 18 GHz. Ini memberikan saturated output power 10 W (40 dBm) dengan penguatan lebih dari 38 dB. PA ini membutuhkan suplai DC 22 V dan mengkonsumsi arus kurang dari 3,3 A. Ini tersedia dalam modul berukuran 1,30 x 1,80 x 0,88 inci dan memiliki konektor SMA-female yang dapat dilepas
Product Details Part Number PA-2G18G-43-5-40-SFF Manufacturer Quantic PMI (Planar Monolithics) Description 10 W Power Amplifier from 2 to 18 GHz General Parameters Type Power Amplifier Configuration Module with Connector Frequency 2 to 18 GHz Gain 38 to 43 dB Gain Flatness ±3.5 dB Noise Figure 3.5 to 5 dB Grade Commercial, Military Saturated Power 35 to 40 dBm Saturated Power 3.16 to 10 W Input Power 20 dBm Input Power 0.1 W VSWR 2.0:1 Supply Voltage 22 V Dimensions 2 x 1.5 x 0.88 in. Connectors SMA, SMA - Female Weight 2 oz Cooling Options Optional Heatsink with 120 Vac Fan Available Operating Temperature -40 to 85 Degree C Storage Temperature -55 to 125 Degree C
Teledyne Microwave Solutions
TSA-220005-201 dari Teledyne Microwave Solutions adalah Penguat Daya GaN yang beroperasi dari 2 hingga 18 GHz. Ini memberikan saturated output power 20 W (43 dBm) dengan penguatan sinyal kecil lebih dari 55 dB. Amplifier menggunakan sirkuit kontrol untuk memastikan start-up yang aman, dan shutdown/pemulihan termal otomatis dan memiliki pin eksternal untuk kontrol TTL ON/OFF. Ini membutuhkan suplai DC 8/22 V dan mengkonsumsi arus kurang dari 5,5 A. Amplifier ini tersedia dalam modul hermetis yang berukuran 2,90 x 2,00 x 0,41 inci dan memerlukan unit pendingin untuk menjaga suhu casing dalam rentang pengoperasian yang aman.
Product Details Part Number TSA-220005-201 Manufacturer Teledyne Microwave Solutions Description 20 W GaN Power Amplifier from 2 to 18 GHz General Parameters Type Power Amplifier Configuration Module with Connector Application Datalink Industry Application Radar, Electronic Warfare Frequency 2 to 18 GHz Small Signal Gain 55 dB Gain Flatness ±2.5 dB Noise Figure 5 dB Output Power 43 dBm Output Power 19.95 W Grade Commercial, Military Saturated Power 43 dBm Saturated Power 20 W Input Power 20 dBm Input Power 0.1 W Impedance 50 Ohms VSWR 2.0:1 Sub-Category GaN Amplifier Harmonics -10 dBc Supply Voltage 22 to 29 V Current Consumption 0.5 to 5.5 A Technology GaN Package Type Hermetic Dimensions 2.9 x 2 x 0.410 in. Connectors SMA DC Connectors 15-Pin Micro-D Pin Cooling Options External Heatsink required Operating Temperature -55 to 85 Degree C Storage Temperature -62 to 125 Degree C
Exodus Advanced Communications
MPA1020-1 dari Exodus Advanced Communications adalah RF Amplifier dengan Frekuensi 2 hingga 4 GHz, Gain 30 dB, Gain Flatness 2 dB, Daya Output 30 hingga 31,76 dBm, Daya Output 1 hingga 1,5 W.
Product Details Part Number MPA1020-1 Manufacturer Exodus Advanced Communications Description 1 W Power Amplifier from 2 to 4 GHz General Parameters Type Power Amplifier Configuration Module with Connector Frequency 2 to 4 GHz Gain 30 dB Gain Flatness 2 dB Output Power 30 to 31.76 dBm Output Power 1 to 1.5 W P1dB 30 dBm P1dB 1 W IM3 30 dBc Saturated Power 31.76 dBm Saturated Power 1.5 W Input Power 8 dBm Input Power 0.01 W Class AB Impedance 50 Ohms Pulsed/CW CW VSWR Infinity:1 Sub-Category Linear Amplifier, GaN Amplifier, SSPA Input Return Loss 10 dB Harmonics -20 dBc Spurious 60 dBc Supply Voltage 12 to 13 VDC Current Consumption 0.9 Amp Transistor Technology GaN Dimensions 80 x 50 x 17 mm Connectors SMA, SMA - Female Input Connector SMA - Female Output Connector SMA - Female Weight 150 gr. Cooling Options External Heatsink Operating Temperature -20 to 75 Degree C Storage Temperature -40 to 85 Degree C Note Relative Humidity : 5 to 95 %
Amcom Communications
The AM094233SF-3H from Amcom Communications is a RF Amplifier with Frequency 900 MHz to 4.2 GHz, Small Signal Gain 16 to 19.5 dB pk-pk, Gain Flatness ±3 dB, Output Power 31 to 32.5 dBm, Output Power 1.26 to 1.78 W. Tags: Power Amplifier. More details for AM094233SF-3H can be seen below.
AM094233SF-3H dari Amcom Communications adalah RF Amplifier dengan Frekuensi 900 MHz hingga 4,2 GHz, Penguatan Sinyal Kecil 16 hingga 19,5 dB pk-pk, Gain Flatness ±3 dB, Daya Keluaran 31 hingga 32,5 dBm, Daya Keluaran 1,26 hingga 1,78 W.
Product Details Part Number AM094233SF-3H Manufacturer Amcom Communications Description High Power Amplifier Module 0.9 - 4.2GHz, 19.5dB General Parameters Type Power Amplifier Configuration Module with Connector Frequency 900 MHz to 4.2 GHz Small Signal Gain 16 to 19.5 dB pk-pk Gain Flatness ±3 dB Output Power 31 to 32.5 dBm Output Power 1.26 to 1.78 W P1dB 31 to 32 dBm P1dB 1.259 to 1.585 W Saturated Power 31.5 to 32.5 dBm Saturated Power 1.41 to 1.78 W Pulsed/CW CW Input Return Loss 12 dB Output Return Loss 8 dB Supply Voltage -5 to 15 V Current Consumption 65 to 975 mA Connectors SMA, SMA - Female Input Connector SMA - Female Output Connector SMA - Female
Narda-MITEQ
The AMF-3F-01000500-20-30P from Narda-MITEQ is a RF Amplifier with Frequency 1 to 5 GHz, Gain 30 dB, Gain Flatness ± 2 dB, Noise Figure 2 dB, P1dB 30 dBm. Tags: Power Amplifier, Low Noise Amplifier. More details for AMF-3F-01000500-20-30P can be seen below.
AMF-3F-01000500-20-30P dari Narda-MITEQ adalah RF Amplifier dengan Frekuensi 1 hingga 5 GHz, Gain 30 dB, Gain Flatness ± 2 dB, Noise Figure 2 dB, P1dB 30 dBm.
Product Details Part Number AMF-3F-01000500-20-30P Manufacturer Narda-MITEQ Description 1000 to 5000 MHz, 30 dB, Power Amplifier, Low Noise Amplifier General Parameters Type Power Amplifier, Low Noise Amplifier Configuration Module with Connector Industry Application Commercial, Aerospace & Defense Frequency 1 to 5 GHz Gain 30 dB Gain Flatness ± 2 dB Noise Figure 2 dB P1dB 30 dBm P1dB 1 W Grade Military Impedance 50 Ohms VSWR 2.10:1 Input VSWR 2.10:1 Output VSWR 2.10:1 Supply Voltage 15 V Current Consumption 600 mA