Difference between revisions of "5G: Daftar Pembuat RF Power Amplifier"

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Ada beberapa pabrikan pembuat RF Power Amplifier untuk BTS di dunia. Beberapa di antarnya di perlihatkan di bawah ini,
  
  
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* https://www.everythingrf.com/search/microwave-rf-amplifiers?gclid=Cj0KCQiAg_KbBhDLARIsANx7wAx5Qt5VXTPq7yOhwHFHWvF-Bro4BVx_OHMcfHOO_hzA0IQJcUpuFdIaAjthEALw_wcB
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==Quantic PMI (Planar Monolithics)==
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The PA-2G18G-43-5-40-SFF from Quantic PMI is a Power Amplifier that operates from 2 to 18 GHz. It delivers a saturated output power of 10 W (40 dBm) with a gain of more than 38 dB. This PA requires a DC supply of 22 V and consumes less than 3.3 A of current. It is available in a module that measures 1.30 x 1.80 x 0.88 inches and has removable SMA-female connectors
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Product Details
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Part Number    PA-2G18G-43-5-40-SFF
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Manufacturer    Quantic PMI (Planar Monolithics)
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Description    10 W Power Amplifier from 2 to 18 GHz
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 +
General Parameters
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Type            Power Amplifier
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Configuration  Module with Connector
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Frequency      2 to 18 GHz
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Gain            38 to 43 dB
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Gain Flatness  ±3.5 dB
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Noise Figure    3.5 to 5 dB
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Grade          Commercial, Military
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Saturated Power 35 to 40 dBm
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Saturated Power 3.16 to 10 W
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Input Power    20 dBm
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Input Power    0.1 W
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VSWR            2.0:1
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Supply Voltage  22 V
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Dimensions      2 x 1.5 x 0.88 in.
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Connectors      SMA, SMA - Female
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Weight          2 oz
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Cooling Options Optional Heatsink with 120 Vac Fan Available
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Operating Temperature -40 to 85 Degree C
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Storage Temperature  -55 to 125 Degree C
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==Teledyne Microwave Solutions==
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The TSA-220005-201 from Teledyne Microwave Solutions is a GaN Power Amplifier that operates from 2 to 18 GHz. It delivers a 20 W (43 dBm) saturated output power with a small signal gain of more than 55 dB. The amplifier uses control circuitry to ensure safe start-up, and automatic thermal shutdown/recovery and has an external pin for TTL ON/OFF control. It requires a DC supply of 8/22 V and consumes less than 5.5 A of current. This amplifier is available in a hermetic module that measures 2.90 x 2.00 x 0.41 inches and requires a heat sink to keep the case temperatures within a safe operating range.
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Product Details
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Part Number            TSA-220005-201
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Manufacturer          Teledyne Microwave Solutions
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Description            20 W GaN Power Amplifier from 2 to 18 GHz
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General Parameters
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Type                  Power Amplifier
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Configuration          Module with Connector
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Application            Datalink
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Industry Application  Radar, Electronic Warfare
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Frequency              2 to 18 GHz
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Small Signal Gain      55 dB
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Gain Flatness          ±2.5 dB
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Noise Figure          5 dB
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Output Power          43 dBm
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Output Power          19.95 W
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Grade                  Commercial, Military
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Saturated Power        43 dBm
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Saturated Power        20 W
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Input Power            20 dBm
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Input Power            0.1 W
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Impedance              50 Ohms
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VSWR                  2.0:1
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Sub-Category          GaN Amplifier
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Harmonics              -10 dBc
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Supply Voltage        22 to 29 V
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Current Consumption    0.5 to 5.5 A
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Technology            GaN
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Package Type          Hermetic
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Dimensions            2.9 x 2 x 0.410 in.
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Connectors            SMA
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DC Connectors          15-Pin Micro-D Pin
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Cooling Options        External Heatsink required
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Operating Temperature  -55 to 85 Degree C
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Storage Temperature    -62 to 125 Degree C
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==Exodus Advanced Communications==
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The MPA1020-1 from Exodus Advanced Communications is a RF Amplifier with Frequency 2 to 4 GHz, Gain 30 dB, Gain Flatness 2 dB, Output Power 30 to 31.76 dBm, Output Power 1 to 1.5 W. Tags: Power Amplifier. More details for MPA1020-1 can be seen below.
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Product Details
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Part Number          MPA1020-1
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Manufacturer          Exodus Advanced Communications
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Description          1 W Power Amplifier from 2 to 4 GHz
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General Parameters
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Type                  Power Amplifier
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Configuration        Module with Connector
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Frequency            2 to 4 GHz
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Gain                  30 dB
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Gain Flatness        2 dB
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Output Power          30 to 31.76 dBm
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Output Power          1 to 1.5 W
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P1dB                  30 dBm
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P1dB                  1 W
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IM3                  30 dBc
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Saturated Power      31.76 dBm
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Saturated Power      1.5 W
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Input Power          8 dBm
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Input Power          0.01 W
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Class                AB
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Impedance            50 Ohms
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Pulsed/CW            CW
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VSWR                  Infinity:1
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Sub-Category          Linear Amplifier, GaN Amplifier, SSPA
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Input Return Loss    10 dB
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Harmonics            -20 dBc
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Spurious              60 dBc
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Supply Voltage        12 to 13 VDC
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Current Consumption  0.9 Amp
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Transistor Technology GaN
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Dimensions            80 x 50 x 17 mm
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Connectors            SMA, SMA - Female
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Input Connector      SMA - Female
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Output Connector      SMA - Female
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Weight                150 gr.
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Cooling Options      External Heatsink
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Operating Temperature -20 to 75 Degree C
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Storage Temperature  -40 to 85 Degree C
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Note                  Relative Humidity : 5 to 95 %
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==Narda-MITEQ==
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The AMF-3F-01000500-20-30P from Narda-MITEQ is a RF Amplifier with Frequency 1 to 5 GHz, Gain 30 dB, Gain Flatness ± 2 dB, Noise Figure 2 dB, P1dB 30 dBm. Tags: Power Amplifier, Low Noise Amplifier. More details for AMF-3F-01000500-20-30P can be seen below.
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Product Details
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Part Number          AMF-3F-01000500-20-30P
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Manufacturer        Narda-MITEQ
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Description          1000 to 5000 MHz, 30 dB, Power Amplifier, Low Noise Amplifier
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General Parameters
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Type                Power Amplifier, Low Noise Amplifier
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Configuration        Module with Connector
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Industry Application Commercial, Aerospace & Defense
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Frequency            1 to 5 GHz
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Gain                30 dB
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Gain Flatness        ± 2 dB
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Noise Figure        2 dB
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P1dB                30 dBm
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P1dB                1 W
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Grade                Military
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Impedance            50 Ohms
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VSWR                2.10:1
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Input VSWR          2.10:1
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Output VSWR          2.10:1
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Supply Voltage      15 V
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Current Consumption  600 mA
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==Referensi==
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* https://www.everythingrf.com/search/microwave-rf-amplifiers/filters?page=1&country=global&sconfiguration=;Module%20with%20Connector;&stype=;Power%20Amplifier;&spower_w_min=1&spower_w_max=30&sfrequency_min=1000&sfrequency_max=5000

Revision as of 09:45, 30 November 2022

Ada beberapa pabrikan pembuat RF Power Amplifier untuk BTS di dunia. Beberapa di antarnya di perlihatkan di bawah ini,


Quantic PMI (Planar Monolithics)

The PA-2G18G-43-5-40-SFF from Quantic PMI is a Power Amplifier that operates from 2 to 18 GHz. It delivers a saturated output power of 10 W (40 dBm) with a gain of more than 38 dB. This PA requires a DC supply of 22 V and consumes less than 3.3 A of current. It is available in a module that measures 1.30 x 1.80 x 0.88 inches and has removable SMA-female connectors 

Product Details
Part Number     PA-2G18G-43-5-40-SFF
Manufacturer    Quantic PMI (Planar Monolithics)
Description     10 W Power Amplifier from 2 to 18 GHz

General Parameters
Type            Power Amplifier
Configuration   Module with Connector
Frequency       2 to 18 GHz
Gain            38 to 43 dB
Gain Flatness   ±3.5 dB
Noise Figure    3.5 to 5 dB
Grade           Commercial, Military
Saturated Power 35 to 40 dBm
Saturated Power 3.16 to 10 W
Input Power     20 dBm
Input Power     0.1 W
VSWR            2.0:1
Supply Voltage  22 V
Dimensions      2 x 1.5 x 0.88 in.
Connectors      SMA, SMA - Female
Weight          2 oz
Cooling Options Optional Heatsink with 120 Vac Fan Available
Operating Temperature -40 to 85 Degree C
Storage Temperature   -55 to 125 Degree C

Teledyne Microwave Solutions

The TSA-220005-201 from Teledyne Microwave Solutions is a GaN Power Amplifier that operates from 2 to 18 GHz. It delivers a 20 W (43 dBm) saturated output power with a small signal gain of more than 55 dB. The amplifier uses control circuitry to ensure safe start-up, and automatic thermal shutdown/recovery and has an external pin for TTL ON/OFF control. It requires a DC supply of 8/22 V and consumes less than 5.5 A of current. This amplifier is available in a hermetic module that measures 2.90 x 2.00 x 0.41 inches and requires a heat sink to keep the case temperatures within a safe operating range. 

Product Details
Part Number            TSA-220005-201
Manufacturer           Teledyne Microwave Solutions
Description            20 W GaN Power Amplifier from 2 to 18 GHz

General Parameters
Type                   Power Amplifier
Configuration          Module with Connector
Application            Datalink
Industry Application   Radar, Electronic Warfare
Frequency              2 to 18 GHz
Small Signal Gain      55 dB
Gain Flatness          ±2.5 dB
Noise Figure           5 dB
Output Power           43 dBm
Output Power           19.95 W
Grade                  Commercial, Military
Saturated Power        43 dBm
Saturated Power        20 W
Input Power            20 dBm
Input Power            0.1 W
Impedance              50 Ohms
VSWR                   2.0:1
Sub-Category           GaN Amplifier
Harmonics              -10 dBc
Supply Voltage         22 to 29 V
Current Consumption    0.5 to 5.5 A
Technology             GaN
Package Type           Hermetic
Dimensions             2.9 x 2 x 0.410 in.
Connectors             SMA
DC Connectors          15-Pin Micro-D Pin
Cooling Options        External Heatsink required
Operating Temperature  -55 to 85 Degree C
Storage Temperature    -62 to 125 Degree C


Exodus Advanced Communications

The MPA1020-1 from Exodus Advanced Communications is a RF Amplifier with Frequency 2 to 4 GHz, Gain 30 dB, Gain Flatness 2 dB, Output Power 30 to 31.76 dBm, Output Power 1 to 1.5 W. Tags: Power Amplifier. More details for MPA1020-1 can be seen below. 

Product Details
Part Number           MPA1020-1
Manufacturer          Exodus Advanced Communications
Description           1 W Power Amplifier from 2 to 4 GHz

General Parameters
Type                  Power Amplifier
Configuration         Module with Connector
Frequency             2 to 4 GHz
Gain                  30 dB
Gain Flatness         2 dB
Output Power          30 to 31.76 dBm
Output Power          1 to 1.5 W
P1dB                  30 dBm
P1dB                  1 W
IM3                   30 dBc
Saturated Power       31.76 dBm
Saturated Power       1.5 W
Input Power           8 dBm
Input Power           0.01 W
Class                 AB
Impedance             50 Ohms
Pulsed/CW             CW
VSWR                  Infinity:1
Sub-Category          Linear Amplifier, GaN Amplifier, SSPA
Input Return Loss     10 dB
Harmonics             -20 dBc
Spurious              60 dBc
Supply Voltage        12 to 13 VDC
Current Consumption   0.9 Amp
Transistor Technology GaN
Dimensions            80 x 50 x 17 mm
Connectors            SMA, SMA - Female
Input Connector       SMA - Female
Output Connector      SMA - Female
Weight                150 gr.
Cooling Options       External Heatsink
Operating Temperature -20 to 75 Degree C
Storage Temperature   -40 to 85 Degree C
Note                  Relative Humidity : 5 to 95 %

Narda-MITEQ

The AMF-3F-01000500-20-30P from Narda-MITEQ is a RF Amplifier with Frequency 1 to 5 GHz, Gain 30 dB, Gain Flatness ± 2 dB, Noise Figure 2 dB, P1dB 30 dBm. Tags: Power Amplifier, Low Noise Amplifier. More details for AMF-3F-01000500-20-30P can be seen below. 

Product Details
Part Number          AMF-3F-01000500-20-30P
Manufacturer         Narda-MITEQ
Description          1000 to 5000 MHz, 30 dB, Power Amplifier, Low Noise Amplifier

General Parameters
Type                 Power Amplifier, Low Noise Amplifier
Configuration        Module with Connector
Industry Application Commercial, Aerospace & Defense
Frequency            1 to 5 GHz
Gain                 30 dB
Gain Flatness        ± 2 dB
Noise Figure         2 dB
P1dB                 30 dBm
P1dB                 1 W
Grade                Military
Impedance            50 Ohms
VSWR                 2.10:1
Input VSWR           2.10:1
Output VSWR          2.10:1
Supply Voltage       15 V
Current Consumption  600 mA


Referensi

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